Picture of Magnetron sputter DC/RF/HiPIMS - Flextura Gate 2
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Instrument model:

Flextura Gate 2 (Sputtering chamber). Gate 2 is part of the Flextura cluster that have one load-lock (typical 15 minutes pump-down time), one transfer chamber, two growth chambers, one post-growth annealing chamber (all with base pressures in the range of 10-8 - 10-9 mBar) and one analytical chamber (with base pressure in the range 10-10 - 10-9 mBar). A robotic arm allow for sample handling between the different chambers and thus allow for growth, post-growth annealing and surface-sensitive analysis, all in-situ.

Technology Description:

Magnetron sputtering is a technique which can be used for thin film deposition with a wide range of materials – in principle any solid metal or alloy and a variety of compounds. Sputtering is the removal of atomized material from a solid due to energetic bombardment of its surface layers by ions or neutral particles. The Flecxtura Gate 2 offers co-deposition of five targets, and multilayer films without breaking vacuum. The Flextura Gate 2 is intended for high quality processes and is now dedicated for selected nitride- and oxynitride systems.

Technical Information:

Sources: 2 DC, 2 RF and 1 HiPIMS (High-power Impulse Magnetron Sputtering)

Target size: 5 x 3”

Substrate size: 4” Single wafer chamber, but smaller samples can be mounted on the sample holder.

Substrate heating: 20 ºC - 1000 ºC

Gas: Ar, N2, O2 and H2

Materials: Selected nitride and oxynitride systems. 

Tool name:
Magnetron sputter DC/RF/HiPIMS - Flextura Gate 2
Clean Room
Thin film deposition
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