Sources: 1 DC max power 850W and 1 RF max power 150W.
Target size: 3 x 2”
Substrate size: 4” Single wafer chamber, but smaller samples can be mounted on the sample holder.
Substrate heating: 20 ºC - 600 ºC
Gas: Ar, N2 and O2
Materials: wide range of materials allowed, including metal oxides, metal nitrides and metal coatings.