Sources: 1 E-beam (Telemark) and 2 resistive heaters.
Low vacuum: below 1x10-7 Torr base pressure.
Substrate size: 6” Single wafer chamber, but smaller samples can be mounted on the sample holder.
Substrate heating: 20 ºC - 500 ºC
Multilayered deposition: Up to 6 different layers can be deposited without breaking vacuum.
Thin film thickness: down to 10 nm thickness is possible. Upper limit is limited by the amount of material that is in the 7cc crucible.
Gas: O2 for reactive evaporation.
Co-deposition: Up to three materials can be deposited in parallel, employing all three sources.
Materials: Al, Ti, Ni, NiO, Pt, Pd, SiO2. Other materials may be available upon request. For deposition of Au, please see the Leybold E-beam or Baltzers thermal evaporator.