Instrument model:

Technology Description:

Technical Information:

Laser: Air-cooled, solid-state nanosecond pulsed laser (Class 3).

• Fixed operating wavelength of 532 nm.
• Adjustable peak power up to 16 W.
• Short (~5 minutes) warm up time.

Laser focus: Adjustable laser focus. Z-axis adjustment in increments of 0.01 mm, for cutting through thick (~1-2 mm) samples.

Laser alignment: Secondary HeNe laser to visualize the desired pattern on the sample prior to cutting.

Sample size: Large sample stage (15 x 15 cm²) permits scribing of large wafers in a single run.

Materials:

In general, samples should be no more than 2 mm thick. Routine cutting processes have been developed for a variety of materials including:

• Fused silica and quartz (for thin film substrates).
• Mono- and multi-crystalline silicon.
• Transparent oxide semiconductors, including monoclinic Ga₂O₃, both (-201) and (010) surface orientation, wurtzite ZnO and Al₂O₃, as well as rutile TiO₂.

Due to potential damage to the machine, scribing or cutting of materials with higly reflective surfaces is not permitted. For untested materials, please contat the Lab manager to discuss your needs.