Available elements for implantation: H, D, Li, B, C, N, Mg, Al, Si, P, Fe, Ag, Ni, Cr, Ge.
Terminal Voltage: 1MV
Target heating: up to 500 °C.
Accelerating energy: 33 keV (source acceleration) and 400 – 2000 keV (for simple charge).
Sample size: up to 4'' wafers.