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Atomic layer deposition (ALD) (UiO030)
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Wafer size up to 200 mm diameter and 1 mm thickness. May be any material compatible with vacuum and temperatures of ca. 80-450 C. Must not release moisture under such conditions.
The ALD technique builds new surfaces by exploiting self-limiting reactions between highly reactive gas molecules and active sites on surfaces. The self-limiting nature of the process ensures conformal and pin-hole free film on surfaces with complex geometries. The principle behind the technique is to split a chemical reaction between two compounds into a sequential process, where each compound is allowed to saturate a substrate or support in an alternating manner. This strategy provides a digital control of thickness of the deposited material.
Beneq TFS 200
Al2O3, ZnO, TiO2
sub nm to ca. 400 nm. Backside of substrate may also be partially coated.
H2O, O3, plasma
Atomic layer deposition (ALD)
TFS 200- 148
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