Picture of Plasma-enhanced chemical vapor deposition (PECVD)
Current status:
Book | Log
Show/Collapse all

1st Responsible:
2nd Responsible:
You must be logged in to view files.

Instrument model:

Advanced Vacuum Vision 310 MK II

Technology Description:

PECVD is a process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of plasma from the reacting gases. The plasma is created by RF frequency discharge between two electrodes, the space between which is filled with the reacting gases. 

Technical Information:

Substrate size: 12” Single wafer chamber (305 mm diameter), with a 250 mm diameter growth area. Smaller samples can be mounted on the sample holder. 

Mixed frequency generator:  300W at 13.56 MHz and 500W at 187 kHz for deposition of low stress films.

Uniformity: < 5% on a 4'' wafer.

Available gases: N2, SiH4 (2% in N2 and 5% in Ar), NH3, CF4 and N2O.

The lower electrode  is heated up to 300 ºC.

Material restrictions: Polymers and organic materials are not allowed in the chamber. Method not suited for temperature-sensitive materials.


Tool name:
Plasma-enhanced chemical vapor deposition (PECVD)
Clean Room
Plasma deposition
Advanced Vacuum
Vision 310 MK II
Tool rate:
  • SiO2 (Silicon dioxide) with deposition rate ~36 nm/min.
  • Si3N4 (Silicon nitride) with deposition rate ~9 nm/min.
  • SiON (Oxynitride).
  • a-Si (Amorphous silicon).
  • SiC (Silicon carbide).


Licensed Users

You must be logged in to view tool modes.