Sources: 1 DC max effect 1.2 kW and 2 RF max effect 600W
Target size: 3 x 3”
Substrate size: 4” Single wafer chamber, but smaller samples can be mounted on the sample holder.
Substrate heating: 20 ºC - 600 ºC
Gas: Ar, N2 and O2
Materials: wide range of materials allowed, mostly used for metal oxides such as ZnO, Cu2O and SnO.